Infineon BSC019N04NSGATMA1

Infineon · FETs & Power MOSFETs · MPN BSC019N04NSGATMA1

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Specifications

Gate Charge(Qg)108nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)2.4nF
Current - Continuous Drain(Id)204A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.8nF
TypeN-Channel

Technical details

N-Channel 40V 204A 125W Surface Mount TDSON-8

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