Infineon BSC019N04LS

Infineon · FETs & Power MOSFETs · MPN BSC019N04LS

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Specifications

Gate Charge(Qg)41nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)840pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V;2V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)1.5mΩ@10V;1.9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

N-Channel 40V 100A 78W Surface Mount TDSON-8

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