Infineon · FETs & Power MOSFETs · MPN BSC019N02KS G
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| Gate Charge(Qg) | 85nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 620pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13nF |
20V 100A 1.2V 104W 1 N-channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS