Infineon · FETs & Power MOSFETs · MPN BSC018NE2LS
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| Gate Charge(Qg) | 39nC@12V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 1.8mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.7nF |
25V 100A 2V 2.5W 1.8mΩ@4.5V 1 N-channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS