Infineon · FETs & Power MOSFETs · MPN BSC016N03LSGATMA1
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 131nC@10V |
| Current - Continuous Drain(Id) | 32A;100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 2.5W;125W |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF |
| RDS(on) | 1.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10nF |
30V 2.2V 1.6mΩ@10V 1 N-channel TDSON-8 Single FETs, MOSFETs RoHS