Infineon BSC014NE2LSIATMA1

Infineon · FETs & Power MOSFETs · MPN BSC014NE2LSIATMA1

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)52nC@10V
Output Capacitance(Coss)1.596nF
Current - Continuous Drain(Id)179A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation74W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)1.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.591nF
TypeN-Channel

Technical details

N-Channel 25V 179A 74W Surface Mount TDSON-8

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