Infineon BSC014N06NS

Infineon · FETs & Power MOSFETs · MPN BSC014N06NS

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Specifications

Gate Charge(Qg)104nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1.875nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)118pF
RDS(on)1.45mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.125nF
TypeN-Channel

Technical details

N-Channel 60V 100A 156W Surface Mount TDSON-8-FL

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