Infineon · FETs & Power MOSFETs · MPN BSC012N06NS
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 115nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11nF |
N-Channel 60V 100A Surface Mount TSON-8