Infineon BSC012N06NS

Infineon · FETs & Power MOSFETs · MPN BSC012N06NS

No reviews yet — be the first to review Infineon BSC012N06NS.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)115nC@10V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)1.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11nF

Technical details

N-Channel 60V 100A Surface Mount TSON-8

Related FETs & Power MOSFETs