Infineon BSC011N03LSI

Infineon · FETs & Power MOSFETs · MPN BSC011N03LSI

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Specifications

Gate Charge(Qg)68nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)220pF
RDS(on)1.1mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.719nF

Technical details

30V 100A 2.5W Surface Mount TDSON-8(5x6)

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