Infineon BSC010NE2LS

Infineon · FETs & Power MOSFETs · MPN BSC010NE2LS

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Specifications

Gate Charge(Qg)64nC@10V
Drain to Source Voltage25V
Output Capacitance(Coss)2.3nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)1.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)6.3nF
TypeN-Channel

Technical details

N-Channel 25V 100A 96W Surface Mount TDSON-8

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