Infineon BSC010N04LST

Infineon · FETs & Power MOSFETs · MPN BSC010N04LST

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Specifications

Gate Charge(Qg)95nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation167W
Reverse Transfer Capacitance (Crss@Vds)320pF
RDS(on)1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.52nF

Technical details

40V 100A 167W Surface Mount TDSON-8FL

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