Infineon BSC010N04LS6ATMA1

Infineon · FETs & Power MOSFETs · MPN BSC010N04LS6ATMA1

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Specifications

Gate Charge(Qg)67nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)285A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)66pF
RDS(on)1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6nF

Technical details

N-Channel 40V 285A 3W Surface Mount TDSON-8

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