Infineon · FETs & Power MOSFETs · MPN BSC009NE2LSATMA1
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 25V |
| Gate Charge(Qg) | 126nC@10V |
| Current - Continuous Drain(Id) | 221A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 2.5W;96W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.7nF |
| RDS(on) | 0.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.714nF |
N-Channel 25V 221A 2.5W 96W Surface Mount TDSON-8