Infineon BSB280N15NZ3 G

Infineon · FETs & Power MOSFETs · MPN BSB280N15NZ3 G

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)30A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)28mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.6nF

Technical details

150V 30A 3V 57W 28mΩ@10V 1 N-channel MG-DSON-2(4.9x6.3)mm Single FETs, MOSFETs RoHS

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