Infineon · FETs & Power MOSFETs · MPN BSB165N15NZ3 G
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| Gate Charge(Qg) | 26nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 45A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 78W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 16.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.8nF |
150V 45A 4V 78W 16.5mΩ@10V 1 N-channel MG-DSON-2(4.9x6.3)mm Single FETs, MOSFETs RoHS