Infineon · FETs & Power MOSFETs · MPN BSB104N08NP3 G
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| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 42W |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| RDS(on) | 10.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.1nF |
80V 50A 3.5V 42W 10.4mΩ@10V 1 N-channel MG-DSON-2(4.9x6.3)mm Single FETs, MOSFETs RoHS