Infineon BSB053N03LPG

Infineon · FETs & Power MOSFETs · MPN BSB053N03LPG

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)29nC@10V
Output Capacitance(Coss)930pF
Current - Continuous Drain(Id)71A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)91pF
RDS(on)5.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.7nF
TypeN-Channel

Technical details

30V 71A 2.2V 42W 5.3mΩ@10V 1 N-channel N-Channel WDSON-3 Single FETs, MOSFETs RoHS

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