Infineon BSB028N06NN3GXUMA1

Infineon · FETs & Power MOSFETs · MPN BSB028N06NN3GXUMA1

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)143nC@10V
Output Capacitance(Coss)2.8nF
Current - Continuous Drain(Id)90A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)64pF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)12nF
TypeN-Channel

Technical details

N-Channel 60V 90A 78W Surface Mount WDSON-3

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