Infineon · FETs & Power MOSFETs · MPN BSB013NE2LXI
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| Gate Charge(Qg) | 62nC |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 163A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 57W |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF |
| RDS(on) | 1.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.9nF |
25V 163A 1.2V 57W 1.3mΩ@10V 1 N-channel MG-WDSON-2 Single FETs, MOSFETs RoHS