Infineon · FETs & Power MOSFETs · MPN BSB012N03LX3G
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 169nC@10V |
| Output Capacitance(Coss) | 4.4nF |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 89W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 1.8mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 16.9nF |
30V 180A 2.2V 89W 1.8mΩ@4.5V 1 N-channel WDSON-3 Single FETs, MOSFETs RoHS