Infineon · FETs & Power MOSFETs · MPN BSB008NE2LX
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| Gate Charge(Qg) | 258nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 89W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.3nF |
| RDS(on) | 0.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 16nF |
25V 180A 2V 89W 0.8mΩ@10V 1 N-channel MG-DSON-2(4.9x6.3)mm Single FETs, MOSFETs RoHS