Infineon BGR420H6327

Infineon · Transistors (BJTs) · MPN BGR420H6327

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Specifications

Transition frequency(fT)25GHz
Collector - Emitter Voltage VCEO13V
Pd - Power Dissipation120mW
Number1 NPN
typeNPN
Current - Collector(Ic)25mA
Operating Temperature-65℃~+150℃

Technical details

13V 1 NPN NPN 25mA SOT-343-4 Single Bipolar Transistors RoHS

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