Infineon BG5120KE6327

Infineon · FETs & Power MOSFETs · MPN BG5120KE6327

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Specifications

Drain to Source Voltage8V
Output Capacitance(Coss)1.4pF
Current - Continuous Drain(Id)20mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation200mW
Number2 N-Channel
Input Capacitance(Ciss)2.2pF
TypeN-Channel

Technical details

8V 20mA 700mV 200mW 2 N-Channel N-Channel SOT-363 Single FETs, MOSFETs RoHS

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