Infineon · Transistors (BJTs) · MPN BFS481H6327XTSA1
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| Emitter-Base Voltage(Vebo) | 2V |
|---|---|
| Current - Collector Cutoff | 100nA |
| Collector - Emitter Voltage VCEO | 12V |
| Pd - Power Dissipation | 175mW |
| DC Current Gain | 140 |
| Current - Collector(Ic) | 20mA |
| Operating Temperature | - |
| Transition frequency(fT) | 8GHz |
| type | NPN |
| Number | 2 NPN |
Bipolar (BJT) Transistor NPN 12V 20mA 8GHz 175mW Surface Mount SOT-363