Infineon BFR93AWH6327

Infineon · Transistors (BJTs) · MPN BFR93AWH6327

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Specifications

Emitter-Base Voltage(Vebo)2V
Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO12V
DC Current Gain70
Pd - Power Dissipation300mW
Operating Temperature-65℃~+150℃
Current - Collector(Ic)90mA
Transition frequency(fT)6GHz
Vce Saturation(VCE(sat))-
typeNPN
Number1 NPN

Technical details

Bipolar (BJT) Transistor NPN 12V 90mA 6GHz 300mW Surface Mount SOT-323

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