Infineon · Transistors (BJTs) · MPN BFR193WH6327
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 8GHz |
| Collector - Emitter Voltage VCEO | 12V |
| Emitter-Base Voltage VEBO | 2V |
| DC Current Gain | 70 |
| Pd - Power Dissipation | 580mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 80mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | - |
Bipolar (BJT) Transistor NPN 12V 80mA 8GHz 580mW Surface Mount SOT-323