Infineon · Transistors (BJTs) · MPN BFR182WH6327XTSA1
No reviews yet — be the first to review Infineon BFR182WH6327XTSA1.
| Emitter-Base Voltage(Vebo) | 2V |
|---|---|
| Current - Collector Cutoff | 30nA |
| Collector - Emitter Voltage VCEO | 12V |
| DC Current Gain | 70 |
| Pd - Power Dissipation | 250mW |
| Operating Temperature | -65℃~+150℃ |
| Current - Collector(Ic) | 35mA |
| Transition frequency(fT) | 8GHz |
| type | NPN |
| Number | 1 NPN |
Bipolar (BJT) Transistor NPN 12V 35mA 8GHz 250mW Surface Mount SOT-323