Infineon · Transistors (BJTs) · MPN BFP650FH6327
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| Current - Collector Cutoff | 500nA |
|---|---|
| Transition frequency(fT) | 46GHz |
| Collector - Emitter Voltage VCEO | 4.1V |
| DC Current Gain | 110 |
| Pd - Power Dissipation | 200mW |
| type | NPN |
| Current - Collector(Ic) | 50mA |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor NPN 4.1V 50mA 46GHz 200mW TSFP-4