Infineon BFP650FH6327

Infineon · Transistors (BJTs) · MPN BFP650FH6327

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)46GHz
Collector - Emitter Voltage VCEO4.1V
DC Current Gain110
Pd - Power Dissipation200mW
typeNPN
Current - Collector(Ic)50mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 4.1V 50mA 46GHz 200mW TSFP-4

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