Infineon BFP620H7764XTSA1

Infineon · Transistors (BJTs) · MPN BFP620H7764XTSA1

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Specifications

Emitter-Base Voltage(Vebo)1.2V
Current - Collector Cutoff40nA
Collector - Emitter Voltage VCEO2.3V
DC Current Gain270
Pd - Power Dissipation185mW
Operating Temperature-55℃~+150℃
Current - Collector(Ic)80mA
Transition frequency(fT)65GHz
typeNPN
Number1 NPN

Technical details

Bipolar (BJT) Transistor NPN 2.3V 80mA 65GHz 185mW Surface Mount SOT-343-3D

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