Infineon · Transistors (BJTs) · MPN BFP540FESDH6327XTSA1
No reviews yet — be the first to review Infineon BFP540FESDH6327XTSA1.
| Emitter-Base Voltage(Vebo) | 1V |
|---|---|
| Current - Collector Cutoff | 100nA |
| Collector - Emitter Voltage VCEO | 5V |
| DC Current Gain | 50 |
| Pd - Power Dissipation | 250mW |
| Operating Temperature | - |
| Current - Collector(Ic) | 80mA |
| Transition frequency(fT) | 30GHz |
| Vce Saturation(VCE(sat)) | - |
| type | NPN |
5V 50 250mW 80mA NPN TSFP-4 Bipolar RF Transistors RoHS