Infineon · Transistors (BJTs) · MPN BFP 520F H6327
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| Current - Collector Cutoff | 200nA |
|---|---|
| Collector - Emitter Voltage VCEO | 2.5V |
| DC Current Gain | 70 |
| Pd - Power Dissipation | 120mW |
| Operating Temperature | - |
| Current - Collector(Ic) | 50mA |
| Transition frequency(fT) | 45GHz |
| Vce Saturation(VCE(sat)) | - |
| type | NPN |
2.5V 70 120mW 50mA NPN TSFP-4 Bipolar RF Transistors RoHS