Infineon BFN38E6327

Infineon · Transistors (BJTs) · MPN BFN38E6327

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)70MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO6V
DC Current Gain40
Pd - Power Dissipation1.5W
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))500mV

Technical details

300V 40 1 NPN NPN 200mA SOT-223-4 Single Bipolar Transistors RoHS

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