Infineon · Transistors (BJTs) · MPN BFN27E6327HTSA1
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| Current - Collector Cutoff | 20uA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 300V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 25 |
| Pd - Power Dissipation | 360mW |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 200mA |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | 500mV |
Bipolar (BJT) Transistor PNP 300V 200mA 100MHz 360mW Surface Mount SOT-23