Infineon · Transistors (BJTs) · MPN BFN19E6327HTSA1
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 300V |
| DC Current Gain | 40 |
| Pd - Power Dissipation | 1W |
| type | PNP |
| Current - Collector(Ic) | 200mA |
| Vce Saturation(VCE(sat)) | 500mV |
| Operating Temperature | - |
300V 40 PNP 200mA SOT-89 Single Bipolar Transistors RoHS