Infineon BF998E6327

Infineon · FETs & Power MOSFETs · MPN BF998E6327

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Specifications

Configuration-
Gate Charge(Qg)-
Drain to Source Voltage12V
Output Capacitance(Coss)1.1pF
Current - Continuous Drain(Id)30mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)0.025pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)2.5pF

Technical details

N-Channel 12V 30mA Surface Mount SOT-143

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