Infineon BF771E6765N

Infineon · Transistors (BJTs) · MPN BF771E6765N

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Specifications

Emitter-Base Voltage(Vebo)2V
Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO12V
DC Current Gain70
Pd - Power Dissipation580mW
Current - Collector(Ic)80mA
Transition frequency(fT)8GHz
typeNPN

Technical details

12V 70 580mW 80mA NPN SOT-23-3 Bipolar RF Transistors RoHS

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