Infineon · Transistors (BJTs) · MPN BF517E6327
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| Transition frequency(fT) | - |
|---|---|
| Collector - Emitter Voltage VCEO | 15V |
| Emitter-Base Voltage VEBO | 2.5V |
| DC Current Gain | 40 |
| Pd - Power Dissipation | 280mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 25mA |
| Vce Saturation(VCE(sat)) | 400mV |
| Operating Temperature | -65℃~+150℃ |
15V 40 1 NPN NPN 25mA SOT-23-3 Single Bipolar Transistors RoHS