Infineon · FETs & Power MOSFETs · MPN BF5030RE6327
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | - |
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 25mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 200mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
12V 25mA 700mV 200mW 1 N-channel N-Channel SOT-143R Single FETs, MOSFETs RoHS