Infineon BF 888 H6327

Infineon · Transistors (BJTs) · MPN BF 888 H6327

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Specifications

Transition frequency(fT)47GHz
Collector - Emitter Voltage VCEO4V
DC Current Gain250
Pd - Power Dissipation160mW
typeNPN
Current - Collector(Ic)30mA

Technical details

4V 250 NPN 30mA SOT-343-4 Single Bipolar Transistors RoHS

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