Infineon BCV26E327

Infineon · Transistors (BJTs) · MPN BCV26E327

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain20000
Pd - Power Dissipation360mW
typePNP
Current - Collector(Ic)500mA
Operating Temperature-
Vce Saturation(VCE(sat))1V

Technical details

30V 20000 PNP 500mA SOT-23 Single Bipolar Transistors RoHS

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