Infineon BCR553E6327HTSA1

Infineon · Transistors (BJTs) · MPN BCR553E6327HTSA1

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain40
Operating Temperature-
Current - Collector(Ic)500mA
Input Resistor2.9kΩ
Resistor Ratio1.1
Number-
Pd - Power Dissipation330mW
Voltage - Input(Max)(VI(off))1.5V
Input Voltage (VI(on)@Ic,Vce)1V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 500mA 330mW Surface Mount SOT-23

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