Infineon BCR148WH6327XTSA1

Infineon · Transistors (BJTs) · MPN BCR148WH6327XTSA1

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain70
Operating Temperature-40℃~+150℃
Current - Collector(Ic)100mA
Input Resistor47kΩ
Resistor Ratio1
Number1 NPN (Pre-Biased)
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))1.5V
Input Voltage (VI(on)@Ic,Vce)1V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 250mW Surface Mount SOT-323

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