Infineon BCR133SH6327

Infineon · Transistors (BJTs) · MPN BCR133SH6327

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)130MHz
DC Current Gain30
Vce Saturation(VCE(sat))300mV
Input Resistor10kΩ
Resistor Ratio1
Pd - Power Dissipation250mW
Current - Collector(Ic)100mA
Voltage - Input(Max)(VI(off))1.5V
Input Voltage (VI(on)@Ic,Vce)1V
Collector - Emitter Voltage VCEO50V
typeNPN

Technical details

30 250mW 100mA 50V 2 NPN (Pre-Biased) SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

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