Infineon · Transistors (BJTs) · MPN BCR133E6327HTSA1
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 30 |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 13kΩ |
| Resistor Ratio | 1 |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 200mW |
| Voltage - Input(Max)(VI(off)) | 1.5V |
| Input Voltage (VI(on)@Ic,Vce) | 1V |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 200mW Surface Mount SOT-23-3