Infineon · Transistors (BJTs) · MPN BCR 562 E6327
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 150MHz |
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 60 |
| Vce Saturation(VCE(sat)) | 300mV |
| Current - Collector(Ic) | 500mA |
| Input Resistor | 4.7kΩ |
| type | PNP |
| Resistor Ratio | 1.1 |
| Number | 1 PNP Pre-Biased |
| Pd - Power Dissipation | 330mW |
| Input Voltage (VI(on)@Ic,Vce) | 2.2V |
Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 500mA 330mW Surface Mount SOT-23