Infineon BCR 116 E6327

Infineon · Transistors (BJTs) · MPN BCR 116 E6327

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain70
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Input Resistor6.2kΩ
Number1 NPN (Pre-Biased)
typeNPN
Resistor Ratio0.11
Input Voltage (VI(on)@Ic,Vce)1.4V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA Surface Mount SOT-23

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