Infineon · Transistors (BJTs) · MPN BCR 112 E6327
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 140MHz |
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 20 |
| Vce Saturation(VCE(sat)) | 300mV |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 6.2kΩ |
| Number | 1 NPN (Pre-Biased) |
| Resistor Ratio | 1.1 |
| type | NPN |
| Input Voltage (VI(on)@Ic,Vce) | 1V |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA Surface Mount SOT-23