Infineon BCP68E6327

Infineon · Transistors (BJTs) · MPN BCP68E6327

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation1.5W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))500mV

Technical details

20V 1 NPN NPN 1A Single Bipolar Transistors

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