Infineon BCP 56-10 H6327

Infineon · Transistors (BJTs) · MPN BCP 56-10 H6327

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain100
Pd - Power Dissipation2W
typePNP
Current - Collector(Ic)1A
Operating Temperature-
Vce Saturation(VCE(sat))500mV

Technical details

80V 100 PNP 1A SOT-223-4 Single Bipolar Transistors RoHS

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