Infineon · Transistors (BJTs) · MPN BC859-C
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| Current - Collector Cutoff | 15nA |
|---|---|
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 30V |
| DC Current Gain | 420 |
| Pd - Power Dissipation | 250mW |
| type | PNP |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 650mV |
30V 420 PNP 100mA SOT-23-3(TO-236-3) Single Bipolar Transistors RoHS