Infineon BC859-C

Infineon · Transistors (BJTs) · MPN BC859-C

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO30V
DC Current Gain420
Pd - Power Dissipation250mW
typePNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))650mV

Technical details

30V 420 PNP 100mA SOT-23-3(TO-236-3) Single Bipolar Transistors RoHS

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